Voltage Divider Bias
The Voltage Divider bias for N-channel enhancement MOSFET is given below. This configuration is similar to the divider circuit utilized with BJT transistors. Specifically the N Channel MOSFET requires a gate voltage higher than its source just like NPN BJT uses base voltage higher than its emitter.
In the given circuit the resistors R1 and R2 are used construct the divider circuit which sets the gate voltage. VGs is equal to when the source of the E-MOSFET is directly linked to ground. The Voltage Across the Resistor R2 must be greater than VGS(th) for proper operation.
The Characteristic equation for the E-MOSFET can be given as
[Tex]K=\frac{I_D}{(V_{GS}-V{GS}(th))^2}[/Tex]
E-MOSFET
Enhancement MOSFET which is commonly called as E-MOSFET is a type of field effect transistor which is used mainly in voltage-controlled devices. It is a unipolar device, i.e. device in which conduction of current takes place either by electrons or holes. It is a three-terminal device which is mainly used as amplifier or in switching devices.
This type of transistor can be used both in analog and digital devices. These transistors are more popular than Bipolar junction transistors due to less power dissipation and negligible leakage current. These are smaller in size and hence find its application in integrated circuits (ICs).
Table of Content
- Enhancement Type MOSFET
- Symbol
- Types of E-MOSFET
- N-Channel E-MOSFET
- P-Channel E-MOSFET
- Working
- Characteristics
- Difference Between Depletion MOSFET and Enhancement MOSFET
- Features of
- Advantages
- Disadvantages
- Applications