Why use a FinFET device in place of MOSFET?
As to increase the number of transistors in a chip the size of transistor is to be reduced, the size of the transistor is reduced by decreasing the channel length between the drain and source, but as channel length decreases drain and source come close to each other and the problem of short channel effect arises in common MOSFETs and the leakage current increases between source and drain.
Short channel effect is when the width of depletion region between source and drain become approximately equals to channel length between drain and source.
Some of The problem that arise due to short channel effect are :
- Drain Induced barrier lowering (DIBL)
- Surface Scattering
- Velocity saturation
- Impact Ionization
- Hot Electron Effect
FinFET overcomes this problem of short channel effect because of its fins and gate surrounded by channel from three sides the fins increase the area covered by gate and increase the control of gate over the channel which reduces the leakage current and helps to reduce the channel length and size of transistor .
FinFET
Semiconductor Industry is a very dynamic industry as it changes from time to time. As per Moore’s Law, the number of transistors present in a chip doubles every 18 months or 2 years. So the size of chips and electronic device get smaller and smaller. The introduction of FinFET technology in the semiconductor industry played a crucial role.
FinFET is a non-planar transistor that has replaced common planar MOSFET. The Introduction of FinFET not only overcame the challenges of common MOSFET but also helped to make the size of the electronic device compact due to its 3D and fin-shaped vertical structure. FinFET has been widely used in mobile, laptops, and IoT devices due to energy efficiency, fast switching speed, and various such advantages.